Intel StrataFlash™ Memory Development and Implementation
Published: |
May 7, 1999 |
Author: |
Al Fazio, Mark Bauer |
Abstract: |
This paper will review the device physics governing the operation of the industry standard ETOX™ flash memory cell and show how it is ideally suited for multiple bit per cell storage, through its storage of electrons on an electrically isolated floating gate and through its direct access to the memory cell.... |
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